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Syllabus

Course Number 0512-4700-02
Course Name Microelectronics
Academic Unit The Iby and Aladar Fleischman Faculty of Engineering -
Electrical Engineering
Mode of Instruction Exercise
Credit Hours 1
Semester 2020/1
Day Sun
Hours 18:00-19:00
Building
Room
Course is taught in English
Syllabus Not Found

Short Course Description

Credit points: 3.5
Prerequisites: Electronic Devices
This course covers all major microfabrication processes: General overview of the microfabrication technology. The structures of crystals and the silicon crystal, defects in crystals, fabrication processes of silicon crystals (CZ, FZ). Ion implantation. Diffusion. Thin layers: Evaporation, sputtering, CVD, PECVD, oxidation. Etching processes: Wet etching, dry etching (physical, chemical, RIE, DRIE). Photolithography. Conducting coatings. Electrical contacts and packaging: Wire bonding, flip-chip, wafer scale packaging. Overview of the Bipolar and CMOS technology in light of the subjects studied. Overview of MEMS in light of the subjects studies. Yield and reliability of the VLSI technology. Basic CAD for VLSI.



Goals


1. Micro and Nano fabrication process principles
2. Basic physics, chemistry
3. Process integration
4. Tools and methods
5. Metrology challenges
6. Trends and prospects

Each lecture, even it is specifically mentioned below, will start with basic principles, modeling, and continues with manufacturing, tools and methods and finally with metrology need and challenges, metrology tools and methods.










Syllabus - Micro/Nano technologies





Lecture



Date/Time (min)


Title


Content




1.


60


Introduction


Historical review and milestones, fabrication concepts, scaling, ITRS concepts




2


120


Lithography I


Principles of optical lithography -
Exposure: light sources, High pressure Hg arc lamps and Excimer lasers, masks, image modeling, aberrations,
Photoresist principles and modeling. The basic ABC model and its modification. FEM - dose and focus.




3


180


Lithography II


Tools: Steppers and step and scans,
Next generation lithography (NGL) - 157 nm immersion litho, EUV,EBL, IBL, XRL, Soft Litho and SPL.
Advanced Litho: Sub 45 nm processes, Double patterning,
Metrology and process control.
Other methods and nanolithography.




4



180


Doping & Junction formation I



Ion implantation: Principles, interaction of energetic ions and matter, modeling and tools. Monte Carlo simulation of II.
Modeling of II in Si - shallow and deep implants
Ion implanters - tools outline and methods..




5



120



Doping & Junction formation II



Principles - diffusion equations, high concentration diffusion, effect of charged vacancies and interstitials, surface effects, 2D and 3D effects in highly dense circuits, examples for Source/Drain junction formation, well formation,




6


60



Rapid Thermal



Full syllabus will be available to registered students only
Course Requirements

Students may be required to submit additional assignments
Full requirements as stated in full syllabus

PrerequisiteElectronic Devices (05122508)


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